Bonded body, ceramic copper circuit substrate, and semiconductor device
US12115603B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 10, 2022 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Jan 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0338
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.