System and method for semiconductor topography simulations
US12118707B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2022 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Sep 16, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2219/2021
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for topography simulation of a physical structure under a topography-changing process. The method includes initializing a voxel mesh as a three-dimensional (3D) representation of the physical structure, generating a batch of particles, simulating a flight path of one of the particles with a ray-tracing method by a parallel processing thread in a hardware accelerator, identifying a surface normal of a voxel unit in the voxel mesh that intersects the flight path by the parallel processing thread, determining a surface reaction between the one of the particles and the voxel unit by a central processing unit (CPU), and updating the voxel mesh based on the determining of the surface reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.