Power device and fabrication method thereof
US12119199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2021 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Sep 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J19/24
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure discloses a power device including at least one vacuum packaged unit structure. The unit structure comprises a silicon substrate (100) and an emitter (200), a light modulator (300) and a collector (400) formed on the silicon substrate (100). On the one hand, the unified silicon-based process is compatible with the existing commercial process, so that it is easy for integration, simple for manufacture, and low in cost; on the other hand, the light modulator (300) is introduced and formed on the silicon substrate by a silicon-based process, which enhances field emission efficiency of the emitter (200), offsets the inconsistency of distances between the tips of the emitters (200) and the collector (400) caused by unevenness of the emitters, and increases the process redundancy of the cold cathode emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.