Method for preparing semiconductor structure and semiconductor structure
US12119222B2 · kind B2 · utility
0Cited by
8References
10Claims
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Key dates
| Filing date | Aug 4, 2021 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Jan 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a semiconductor structure includes: providing a substrate which includes a device region and a shallow trench isolation region surrounding the device region, in which the device region is exposed from a surface of the substrate; depositing a barrier layer on the substrate, the barrier layer at least covering the device region; forming an initial oxide which is located in the device region and in contact with the barrier layer; and removing part of the initial oxide to form a device oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.