Semiconductor apparatus and manufacturing method of semiconductor apparatus
US12119227B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2021 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Oct 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor apparatus including: a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially (almost) flat donor concentration distribution in a depth direction. An oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10−5 to 7×10−4. A concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration. A hydrogen donor concentration in the flat portion ranges from 2×1012/cm3 to 5×1014/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.