Fusion memory device and method of fabricating the same
US12119336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2022 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Aug 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/845
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are fusion memory devices and methods of fabricating the same. The fusion memory device comprises a first memory device including a first substrate having active and inactive surfaces opposite to each other and a first memory cell circuit on the active surface of the first substrate, a non-memory device including a second substrate having active and inactive surfaces opposite to each other and a non-memory circuit on the active surface of the second substrate, the non-memory device being provided on the first memory device, and a second memory device on the inactive surface of the second substrate and including a second memory cell circuit different from the first memory cell circuit. The non-memory device lies between the first and second memory cell circuits and controls an electrical operation of each of the first and second memory cell circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.