Insulated gate bipolar transistor
US12119395B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 26, 2020 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Jul 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/232
Abstract
An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.