Semiconductor vertical Schottky diode and method of manufacturing thereof

US12119412B2 · kind B2 · utility

Assignee

• LFOUNDRY S.R.L. · IT

Inventors

• Carsten Schmidt · Jena, DE
• Gerhard Spitzlsperger · Avezzano, IT

Key dates

• Filing date: Sep 20, 2019
• Grant date: Oct 15, 2024
• Expiry date: Jul 18, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A semiconductor vertical Schottky diode device, having: a substrate of semiconductor material, with a front surface and a back surface; a lightly doped region formed in a surface portion of the substrate facing the front surface, having a first conductivity type; a first electrode formed on the lightly doped region on the front surface of the substrate, to establish a Schottky contact; a highly doped region at the back surface of the substrate, in contact with the lightly doped region and having the first conductivity type; and a second electrode electrically in contact with the highly doped region, on the back surface of the substrate, to establish an Ohmic contact.