Buffer layers for photovoltaic devices with group V doping

US12119416B2 · kind B2 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Le Chen · Fremont, US
• Sachit Grover · Campbell, US
• Jason Kephart · San Jose, US
• Sergei Kniajanski · Clifton Park, US
• Chungho Lee · Sunnyvale, US
• Xiaoping Li · Lo Wu, CN
• Feng Liao · Perrysburg, US
• Dingyuan Lu · San Jose, US
• Rajni Mallick · Fremont, US
• Wenming Wang · Chengdu, CN
• Gang Xiong · Beaverton, US
• Wei Zhang · Nanjing, CN

Key dates

• Filing date: Oct 23, 2019
• Grant date: Oct 15, 2024
• Expiry date: Oct 23, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/543

Abstract

According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.