Semiconductor laser apparatus and semiconductor laser device
US12119611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2021 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Mar 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.