Semiconductor lasers with substrate mode suppression layers

US12119615B1 · kind B1 · utility

Assignee

• ANHUI GAN SEMICONDUCTOR CO., LTD. · CN

Inventors

• Shuiqing LI · Xiamen, CN
• Hongzhu Kan · Jiangjiadian, CN
• Jinjian Zheng · Xiamen, CN
• Xinghe Wang · San Diego, US
• Xin Cai · Hangzhou City, CN
• Wanjun CHEN · Chengdu, CN
• Jiangyong ZHANG · Jiangjiadian, CN
• JUN-HAN HUANG · Hangzhou City, CN
• Zihan Hans Liu · Xianyang, CN

Key dates

• Filing date: Apr 17, 2024
• Grant date: Oct 15, 2024
• Expiry date: Apr 17, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/183
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Disclosed is a semiconductor laser with a substrate mode suppression layer, comprising a substrate, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, an electron blocking layer, and a second limiting layer sequentially stacked from bottom to top. A Si/C concentration ratio of an element Si to an element C of the substrate mode suppression layer≥that of the first sub-limiting layer≥that of the second sub-limiting layer. An In/Al concentration ratio of an element In to an element Al of the substrate mode suppression layer≥that of the first sub-limiting layer≥that of the second sub-limiting layer. An H/C concentration ratio of an element H to an element C of the substrate mode suppression layer≥that of the second sub-limiting layer≥that of the first sub-limiting layer.