Semiconductor device and semiconductor device control method
US12119816B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 26, 2022 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Sep 26, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, includes: a first first-conductivity-type transistor supplied with a first power source voltage and controlled by an output signal of a first input inverter; a second first-conductivity-type transistor supplied with the first power source voltage and controlled by an output signal of a second input inverter that inverts an output signal of the first input inverter; a first and a second second-conductivity-type transistor supplied with a second power source voltage; and a third and a fourth first-conductivity-type transistor that are connected in parallel either between the first first-conductivity-type transistor and the first second-conductivity-type transistor or between the second first-conductivity-type transistor and the second second-conductivity-type transistor, and that are configured to isolate either a first node connected to the first first-conductivity-type transistor or a second node connected to the second first-conductivity-type transistor from the second power source voltage in accordance with the first power source voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.