Method for manufacturing a microelectronic device comprising a plurality of resistive memory points configured to form a physical unclonable function and said device
US12120889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2021 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Sep 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04L2209/12
- WIPO fieldDigital communication
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a microelectronic device including resistive memory points, a first portion of the memory points forming a physical unclonable function, the memory points of the first portion forming a PUF zone, a second portion of the memory points providing a memory function, the memory points of the second forming a memory zone, the method including providing a support including a first electrode layer and an active oxide resistive memory layer; etching the active oxide resistive memory layer in the PUF zone; etching the active oxide resistive memory layer in the memory zone, the etching in the memory zone producing a dispersion of roughness of the oxide layer less than the dispersion of roughness produced by the etching in the PUF zone; depositing a second electrode layer; etching the second electrode layer, the active oxide layer and the first electrode layer to define the memory points.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.