Semiconductor structure with multi-layers film
US12124083B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2022 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Mar 30, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12107
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from λ/4 to λ2, λ is a wavelength of light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.