Reflective mask blank and reflective mask
US12124164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2024 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Mar 29, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/48
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.