Patent · US Active

Plasma processing apparatus

US12125685B2 · kind B2 · utility

0Cited by
7References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 27, 2022
Grant dateOct 22, 2024
Priority date
Expiry dateOct 27, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/68735
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A plasma processing apparatus may include a lower electrode supporting a wafer; a focus ring surrounding an edge of the lower electrode and having a ring shape; and an edge ring disposed in a position lower than a position of the focus ring. The focus ring may include a lower region and an upper region disposed on the lower region, and the upper region increases in electrical conductivity as the upper region is closer to the lower region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.