Method for forming pattern
US12125704B2 · kind B2 · utility
0Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2022 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Jan 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a pattern can include the following operations. A substrate is provided, on the surface of which a patterned photoresist layer is formed. Based on the photoresist layer, isolation sidewalls are formed, in which each isolation sidewall includes a first sidewall close to the photoresist layer and a second sidewall away from the photoresist layer. Core material layers are formed between two adjacent isolation sidewalls. The second sidewalls are removed to form the pattern composed of the first sidewalls and the core material layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.