Power semiconductor device and method of manufacturing the same, and power conversion device
US12125758B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2020 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Dec 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device in which the size of an insulating substrate is reduced and connection failure can be suppressed includes an insulating substrate, a semiconductor element, and a printed circuit board. The semiconductor element is bonded to one main surface of the insulating substrate. The printed circuit board is bonded to face the semiconductor element. The semiconductor element has a main electrode and a signal electrode. The printed circuit board includes a core member, a first conductor layer, and a second conductor layer. The second conductor layer has a bonding pad. The printed circuit board has a missing portion. A metal column portion is arranged to pass through the inside of the missing portion and reach the insulating substrate. The signal electrode and the bonding pad are connected by a metal wire. The metal column portion and the insulating substrate are bonded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.