Solid-state imaging device and electronic apparatus
US12125858B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2020 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Nov 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device capable of achieving higher image quality is provided.Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit. An insulation film portion is disposed at least on a part of an outer circumference of the conductive portion. The insulation film portion includes at least one layer of an insulation film. The at least one layer of the insulation film has fixed charge of a ty…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.