Patent · US Active

Semiconductor light emitting devices and partition wall structure, and methods of manufacturing the same

US12125869B2 · kind B2 · utility

0Cited by
41References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 6, 2021
Grant dateOct 22, 2024
Priority date
Expiry dateJan 18, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/856
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor light emitting device is provided. The semiconductor light emitting device includes a plurality of light emitting structures, each of which includes a first surface and a second surface, a plurality of embossed portions provided on the first surface; a partition wall structure provided on the first surface of the plurality of light emitting structures and including a plurality of partition walls which define a plurality of pixel spaces; and a fluorescent layer provided in the plurality of pixel spaces. A bottom surface of the partition wall structure contacts the plurality of embossed portions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.