Semiconductor device and solar cell and production method for semiconductor device
US12125926B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 25, 2020 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Jun 25, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The present invention realizes a hole-selective film provided with both hole selectivity and passivation characteristics. This production method for a semiconductor device is provided with a step for forming a titanium oxide film on a crystalline silicon layer by means of a thermal atomic layer deposition method, and a step for carrying out a hydrogen plasma process on the titanium oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.