Method for passivating silicon-based semiconductor device, and silicon-based semiconductor device
US12125936B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 29, 2020 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Nov 30, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Provided is a method for passivating a silicon-based semiconductor device and a silicon-based semiconductor device. The method includes the following steps: cutting, by using a cutting process, a preset region of the silicon-based semiconductor device, to form a first surface associated with the preset region; smoothing the first surface to adjust a surface appearance of the first surface, so that a height difference between a protrusion and a recess of a non-marginal region on the first surface is less than 20 nm; and passivating the smoothed first surface to form a first passivation layer on the first surface. The present application can reduce or avoid the problem of efficiency reduction caused by cutting a silicon-based semiconductor device and help to obtain a more efficient silicon-based semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.