Semipolar micro-LED
US12125944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2021 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Jan 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode includes an n-type semiconductor layer including a pit structure formed therein, active layers grown only on sidewalls of the pit structure and configured to emit light, and a p-type semiconductor layer on the active layers and at least partially in the pit structure. In one embodiment, the pit structure is characterized by a shape of an inverted pyramid. The pit structure is formed in the n-type semiconductor layer by, for example, etching the n-type semiconductor layer using an etch mask layer having apertures with slanted sidewalls, or growing the n-type semiconductor layer on a substrate through a mask layer having an array of apertures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.