Film bulk acoustic resonator
US12126326B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | May 13, 2022 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Mar 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/131
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed is a film bulk acoustic resonator (FBAR) including a substrate, a lower electrode formed above the substrate, a piezoelectric layer formed above the lower electrode, an upper electrode formed above the piezoelectric layer, and a first protection layer formed above the upper electrode. Here, the first protection layer covers the upper electrode while extending downward along a side surface of one end of the upper electrode to cover a certain area of the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.