Semiconductor device
US12126344B2 · kind B2 · utility
0Cited by
20References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2021 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Jul 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with low power consumption can be provided. The semiconductor device includes a differential circuit and a latch circuit, the differential circuit includes a transistor including an oxide semiconductor in a channel formation region, and the latch circuit includes a transistor including a single semiconductor or a compound semiconductor in a channel formation region. The differential circuit and the latch circuit include an overlap region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.