Method for manufacturing a semiconductor structure and semiconductor structure
US12127390B2 · kind B2 · utility
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4References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 21, 2021 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Apr 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
Abstract
Provided is a method for manufacturing a semiconductor structure and a semiconductor structure, and relates to the field of semiconductor technology. The method for manufacturing the semiconductor structure includes: providing a substrate, stacking and forming a bit line contact layer, a first mask layer, a second mask layer and a plurality of mask structures arranged spaced apart from each other in sequence on the substrate, and forming first openings between adjacent mask structures; and removing a part of the second mask layer exposed in the first openings so as to form first grooves in the second mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.