Preparation methods of quantum dot light emitting device and quantum dot display panel using stacked sacrificial layer and photoresist layer
US12127464B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2020 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Jul 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/233
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist layer; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.