Patent · US Active

Polishing head, chemical-mechanical polishing system and method for polishing substrate

US12128522B2 · kind B2 · utility

0Cited by
15References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 22, 2022
Grant dateOct 29, 2024
Priority date
Expiry dateDec 29, 2042

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB24B57/02
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

A method includes supplying slurry onto a polishing pad; holding a wafer against the polishing pad with a piezoelectric layer interposed vertically between a pressure unit and the wafer; exerting a force on the piezoelectric layer using the pressure unit to make the piezoelectric layer directly press the wafer; generating, using the piezoelectric layer, a first voltage corresponding to a first portion of the wafer and a second voltage corresponding to a second portion of the wafer; tuning the force exerted on the piezoelectric layer according to the first voltage and the second voltage; and polishing, using the polishing pad, the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.