Heat sink, semiconductor package and semiconductor module
US12130096B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 28, 2020 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Jun 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a heat sink having a clad structure of Co—Mo composite materials and Cu materials, satisfying high heat-sink properties required of the heat sink for use in a semiconductor package with a frame on which a high-output and small-sized semiconductor is mounted, and preventing, when applied to the semiconductor package with a frame, crack of the frame due to local stress concentration. The heat sink has three or more Cu layers and two or more Cu—Mo composite layers alternately stacked in a thickness direction so that the Cu layers are outermost layers on both sides thereof, the Cu layers as the outermost layers each having a thickness t1 of 40 μm or more, the heat sink satisfying 0.06≤t1/T≤0.27 (where T: heat sink thickness) and t2/T≤0.36/[(total number of layers−1)/2] (where t2: Cu—Mo composite layer thickness, the total number of layers: sum of numbers of Cu layers and Cu—Mo composite layers).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.