Semiconductor device including separation pattern penetrating gate structure and method of fabricating the same
US12132046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2021 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Oct 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
Abstract
Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a plurality of gate structures that are spaced apart from each other in a first direction on a substrate and extend in a second direction intersecting the first direction, and a plurality of separation patterns penetrating immediately neighboring ones of the plurality of gate structures, respectively. Each of the plurality of separation patterns separates a corresponding one of the neighboring gate structures into a pair of gate structures that are spaced apart from each other in the second direction. The plurality of separation patterns are spaced apart from and aligned with each other along the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.