Continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices

US12132137B2 · kind B2 · utility

Assignee

• MELLANOX TECHNOLOGIES, LTD. · IL

Inventors

• Oren Steinberg · Shahar, IL
• Anders Larsson
• Attila Fülöp · Gothenburg, SE
• Elad Mentovich · Tel Aviv-Yafo, IL
• Isabelle Cestier · Haifa, IL
• Moshe Oron · Rehovot, IL

Key dates

• Filing date: Aug 5, 2022
• Grant date: Oct 29, 2024
• Expiry date: Jan 21, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/12485

Abstract

Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semiconductor layer associated with a first bandgap value and forming, onto the first semiconductor layer, a grading layer associated with a continuous compositional grading. The example method further includes forming, onto the grading layer, a second semiconductor layer associated with a second bandgap value. The second bandgap value is different than the first bandgap value.