T-match topology with baseband termination
US12132453B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Mar 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element connected between the transistor output terminal and a quasi RF cold point node, a second inductive element connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes a third inductive element, a resistor, and a second capacitance in series between the quasi RF cold point node and the ground reference node and a third capacitance between a baseband termination circuit node and the ground reference node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.