Radiofrequency power amplifier
US12132454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2019 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | May 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/541
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A radiofrequency, RF, power amplifier, including at least one field-effect transistor, FET, wherein a source terminal of the at least one FET is connected to ground. At least one diode is included, wherein a cathode of the at least one diode is connected to a drain terminal of the at least one FET and an anode of the at least one diode is connected to ground. An output network is connected to the drain terminal of the at least one FET. An input network is connected to a gate terminal of the at least one FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.