Plasma etching method
US12134722B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Jun 1, 2020 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Apr 28, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a plasma etching method including a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.