Power module and power conversion device
US12136582B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2019 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Aug 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power module is obtained in which the thermal resistance in the range from a semiconductor device to a base plate is reduced and the stress in the joining portion is relieved. The power module includes at least one semiconductor device, an insulating substrate having an insulating layer, a circuit layer provided on an upper surface of the insulating layer and a metal layer provided on a lower surface of the insulating layer, and a sintering joining member with an upper surface larger in outer circumference than a back surface of the at least one semiconductor device, to join together the back surface of the at least one semiconductor device and an upper surface of the circuit layer on an upper-surface side of the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.