Grounded metal ring structure for through-silicon via
US12136600B2 · kind B2 · utility
0Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2021 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Aug 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a semiconductor structure including a TSV in contact with a substrate and a metal ring structure laterally surrounding the TSV. The metal ring structure includes one or more metal rings arranged as a stack and one or more metal vias interposed between two adjacent metal rings of the one or more metal rings. The metal ring structure is electrically coupled to the substrate through one or more conductive structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.