Solid-state imaging device
US12136640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2020 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Apr 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.