Method of producing an optoelectronic component and optoelectronic component
US12136692B2 · kind B2 · utility
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5References
14Claims
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Key dates
| Filing date | Dec 20, 2019 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Jul 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing an optoelectronic component includes providing a semiconductor wafer with a functional semiconductor layer that has electronic control elements, and a growth layer; generating a plurality of recesses in the semiconductor wafer exposing the growth layer in places; and epitaxially growing a plurality of semiconductor layer stacks on the exposed growth layer, wherein a surface of the exposed growth layer is used as a growth surface for the semiconductor layer stacks, and the growth surface is inclined to a main extension plane of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.