Method for forming coating layer having plasma resistance
US12139785B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Oct 20, 2020 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Aug 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32174
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method of forming a coating layer having plasma resistance, the method comprising steps of: preparing a substrate by placing the substrate in a substrate fixing device inside a process chamber; evaporating a Y2O3 deposition material provided in a solid form in an electron beam source by irradiating an electron beam on the Y2O3 deposition material; generating radical particles having activation energy by injecting a process gas containing oxygen for forming radicals into a RF energy beam source; irradiating an RF energy beam including the radical particles generated in the RF energy beam source, toward the substrate; depositing a thin film in which the evaporated deposition material is deposited on the substrate by being assisted by the RF energy beam, and densifying the thin film in which the deposition material deposited on the substrate forms a densified film by ion bombardment of the RF energy beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.