Method of forming ion sensors
US12140557B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2019 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Jan 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for manufacturing a sensor includes etching an insulator layer disposed over a substrate to define an opening exposing a sensor surface of a sensor disposed on the substrate, a native oxide forming on the sensor surface; sputtering the sensor surface with a noble gas to at least partially remove the native oxide from the sensor surface; and annealing the sensor surface in a hydrogen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.