Single photon avalanche detector, method for use therefore and method for its manufacture
US12140707B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 9, 2019 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Dec 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.