Semiconductor device and method of fabricating the same
US12142587B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2023 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Aug 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.