Method of forming semiconductor device
US12142628B2 · kind B2 · utility
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18References
20Claims
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Key dates
| Filing date | Jul 7, 2022 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Nov 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.