Thin film transistor, display apparatus, and method of fabricating thin film transistor

US12142696B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Feng Guan · Beijing, CN
• Yichi Zhang · Beijing, CN
• Yang Lv · Suzhou, CN

Key dates

• Filing date: Dec 21, 2020
• Grant date: Nov 12, 2024
• Expiry date: Jun 1, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6746

Abstract

A thin film transistor is provided. The thin film transistor includes abase substrate; a gate electrode on the base substrate; an active layer on the base substrate, the active layer including a polycrystalline silicon part including a polycrystalline silicon material and an amorphous silicon part including an amorphous silicon material; a gate insulating layer insulating the gate electrode from the active layer; a source electrode and a drain electrode on the base substrate; and an etch stop layer on a side of the polycrystalline silicon part away from the base substrate. An orthographic projection of the etch stop layer on the base substrate covers an orthographic projection of the polycrystalline silicon part on the base substrate, and an orthographic projection of at least a portion of the amorphous silicon part on the base substrate.