Method for regulating photocurrent of IGZO based on two-dimensional black phosphorus material
US12142705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2022 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Mar 9, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The disclosure relates to a method for regulating photocurrent of IGZO based on a two-dimensional black phosphorus material, and belongs to the field of semiconductor devices. The disclosure provides a method for preparing an IGZO-black phosphorus heterostructure by dry transfer technology, and by changing the contact mode between IGZO and black phosphorus, photocurrent response of the IGZO to different laser light wavelengths can be regulated. In the method, both a channel and electrodes of the IGZO are magnetron sputtered by means of masks, and the method has good repeatability and can realize preparation of large-area multi-devices. A black phosphorus sample is prepared by a mechanical exfoliation method, and has controllable thickness and size. A heterojunction is prepared by dry transfer technology, and the technology is easy to operate and highly controllable. The disclosure is beneficial to promote development of IGZO thin films in the micro-nano field and the semiconductor industry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.