CMUT transducer with motion-stopping structure and CMUT transducer forming method
US12145838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2020 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Aug 15, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N29/2406
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure relates to a CMUT transducer (200) comprising: —a conductive or semiconductor substrate (201) coated with a stack of one or a plurality of dielectric layers (203, 213); —a cavity (205, 215) formed in said stack; —a conductive or semiconductor membrane (221) suspended above the cavity; —at the bottom of the cavity, a conductive region (209) in contact with the upper surface of the substrate, said conductive region being interrupted on a portion of the upper surface of the substrate; and—in the cavity, a stop structure (207) made of a dielectric material localized on or above the area of interruption of the conductive region (209).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.