GA-based van der Waals room-temperature ferromagnetic crystal material, preparation and use thereof

US12145842B2 · kind B2 · utility

Assignee

• Huazhong University of Science and Technology · CN

Inventors

• Haixin Chang · Hubei, CN
• Gaojie Zhang · Hubei, CN
• Hao Wu · 红钢城街道, CN

Key dates

• Filing date: Dec 3, 2022
• Grant date: Nov 19, 2024
• Expiry date: Dec 3, 2042

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02B30/00
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention provides a Ga-based van der Waals room-temperature ferromagnetic crystal material, preparation and use thereof, which belong to the technical field of nano magnetic material preparation. The materials include Fe3-aGabTe2 (a=−0.3 to 0.1, b=0.8 to 1.2) and Fe5-c GeGadTe2 (c=−0.2 to 0.2, d=0.01 to 0.5). The growth method of Fe3-aGabTe2 (a=−0.3 to 0.1, b=0.8 to 1.2) is a self-flux method, using excess Ga and Te as flux to grow crystals. The growth method of Fe5-c GeGadTe2 (c=−0.2 to 0.2, d=0.01 to 0.5) uses iodine as a transport agent to grow crystals. The Ga-based van der Waals room-temperature ferromagnetic crystal Fe3-a GabTe2 (a=−0.3 to 0.1, b=0.8 to 1.2) and Fe5-cGeGadTe2 (c=−0.2 to 0.2, d=0.01 to 0.5) materials have Curie temperature of 330 K to 367 K and 320 K to 345 K, and the saturation magnetic moments are 50 emu/g to 57.2 emu/g and 80 emu/g to 88.5 emu/g, respectively.