Waveguide of an SOI structure
US12147105B2 · kind B2 · utility
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1References
21Claims
0Family size
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Key dates
| Filing date | Nov 16, 2022 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Nov 16, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/133357
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes forming a layer made of a first insulating material on a first layer made of a second insulating material that covers a support, defining a waveguide made of the first material in the layer of the first material, covering the waveguide made of the first material with a second layer of the second material, planarizing an upper surface of the second layer of the second material, and forming a single-crystal silicon layer over the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.