MEMS device built on substrate with ruthenium based contact surface material
US12148580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2022 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Oct 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2001/0052
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.