Non-polar III-nitride binary and ternary materials, method for obtaining thereof and uses
US12148612B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 25, 2022 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | May 31, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosure is aimed at a method for obtaining non-polar III-Nitride compact layers by coalescence of an ordered-array of etched non-polar 111-Nitride nanopillars. Besides, the disclosure also relates to the non-polar III-Nitride binary and ternary compact, continuous (2D) films, layers, or pseudo-substrates, obtainable by means of the disclosed method and having advantageous properties. The disclosure also includes a specific group of non-polar III-Nitride compact, continuous (2D) films or layers, having one of the components selected from the group consisting of In, Al and both elements, enfolding ordered arrays of non-polar III-Nitride nano-crystals, regardless the method for obtaining thereof, said film or layer being one of the groups consisting of: non-polar InN, non-polar AlN, non-polar GaxAl1-xN, non-polar InxAl1-xN and non-polar GaxIn1-xN, where 0<x<1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.